Simulations of nanowire transistors: atomistic vs. effective mass models
نویسندگان
چکیده
منابع مشابه
Simulations of nanowire transistors: atomistic vs. effective mass models
The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic structure, and the top-of-the-barrier semiclassical ballistic model for calculation of the transport properties of the transistors. The dispersion is self consistently computed with a 2D Poisson solution for the electr...
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ژورنال
عنوان ژورنال: Journal of Computational Electronics
سال: 2008
ISSN: 1569-8025,1572-8137
DOI: 10.1007/s10825-008-0188-4